| 摘要 |
A gate electrode is formed on a substrate with a gate insulating layer therebetween. A liner is then deposited on sidewalls of the gate electrode. Source/drain extensions are implanted into the substrate. A first spacer is then formed on the liner. Deep source/drain are implanted into the substrate. A second spacer is formed at the foot of the first spacer. A tilt-angle pre-amorphization implant (PAI) is conducted to form an amorphized layer next to the second spacer. A metal layer is then sputtered on the amorphized layer. The metal layer reacts with the amorphized layer to form a metal silicide layer thereto.
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