发明名称 Compositions for preparing low dielectric materials
摘要 Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
申请公布号 US2006249713(A1) 申请公布日期 2006.11.09
申请号 US20060484049 申请日期 2006.07.11
申请人 发明人 PETERSON BRIAN K.;KIRNER JOHN F.;WEIGEL SCOTT J.;MACDOUGALL JAMES E.;DEIS THOMAS A.;DEIS LISA;BRAYMER THOMAS A.;CAMPBELL KEITH D.;DEVENNEY MARTIN;RAMBERG C. E.;CHONDROUDIS KONSTANTINOS;CENDAK KEITH
分类号 B32B27/00;H01B1/12;C01B;C01B33/12;C04B35/14;C08K5/09;C08L101/00;C09D1/00;H01B3/12;H01L21/312;H01L21/316 主分类号 B32B27/00
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