| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an alignment mark detection accuracy in an electron beam exposure. <P>SOLUTION: A manufacturing method of a semiconductor device comprises the steps of (a) forming in a semiconductor wafer the structure of the semiconductor device in a chip, and forming an alignment mark; (b) forming a processed layer in the semiconductor wafer; (c) exposing the alignment mark; (d) applying an electron beam resist film on the processed layer; (e) scanning the alignment mark with the electron beam, obtaining positional information of the alignment mark, and obtaining a difference of the positional information; (f) eliminating an abnormal value based on the difference of the positional information; and (g) performing an electron beam exposure based on the positional information of the alignment mark from which the abnormal value is eliminated. <P>COPYRIGHT: (C)2007,JPO&INPIT |
