| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern transfer method which enables high accuracy pattern formation with little focus displacement on a substrate whose surface roughness is relatively large. <P>SOLUTION: In the pattern transfer method for transferring a pattern formed on a mask M1 onto a substrate P by exposure to light with an exposure device EXP, the method includes a step of setting a plurality of block areas (B1, B2, B3, B4, etc.) in the pattern on the basis of the focal depth of the exposure device EXP and the surface height shape of the substrate P, and a step of exposing each of the plurality of block areas (B1, B2, B3, B4, etc.) in the pattern to light while varying the focal position. <P>COPYRIGHT: (C)2007,JPO&INPIT |
