发明名称 |
Low dielectric constant insulating film and method of forming the same |
摘要 |
The present invention relates to a method of forming a low dielectric constant insulating film. Its constitution has the steps of: (a) forming an insulating film containing Si-CH<SUB>3 </SUB>bond in the skeleton of Si-O-Si on a substrate; (b) irradiating ultraviolet ray to the insulating film in reduced-pressure atmosphere to break CH<SUB>3 </SUB>groups from Si-CH<SUB>3 </SUB>bond in the insulating film; and (c) ejecting the broken CH<SUB>3 </SUB>groups from the insulating film.
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申请公布号 |
US2006251825(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060474348 |
申请日期 |
2006.06.26 |
申请人 |
SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
OHDAIRA TOSHIYUKI;SHIOYA YOSHIMI |
分类号 |
B05D3/06;C23C16/42;C23C16/40;C23C16/56;H01B3/46;H01L21/312;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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