| 摘要 |
A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi<SUB>2</SUB>O<SUB>2</SUB>)<SUP>2+</SUP> (A<SUB>m-1 </SUB>B<SUB>m </SUB>O<SUB>3m+1</SUB>)<SUP>2-</SUP> or Bi<SUB>2</SUB>A<SUB>m-1 </SUB>B<SUB>m </SUB>O<SUB>3m+3</SUB>, wherein "m" is an even number, "A" is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and "B" is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi<SUB>2</SUB>O<SUB>2</SUB>)<SUP>2+</SUP> (A<SUB>m-1 </SUB>B<SUB>m </SUB>O<SUB>3,+1</SUB>)<SUP>2-</SUP> or Bi<SUB>2</SUB>A<SUB>m-1 </SUB>B<SUB>m </SUB>O<SUB>3m+3</SUB>, and the excessive content of Bi is in a range of 0<Bi<0.5xm mol in of Bi.
|
