| 摘要 |
<p>A method for fabricating a NAND-type flash memory device is provided to avoid damage to a semiconductor substrate between an edge cell gate and a select gate when a spacer is formed on the select gate by an interval between the edge cell gate and the select gate such that the interval is narrower than an interval of the select gates and is wider than an interval of center cell gates, by a nitride layer is left on an oxide layer between the edge cell gate and the select gate after a spacer oxide layer is formed. A semiconductor substrate(101) is provided in which a cell region and a select transistor region are defined. While a plurality of cell gates are formed on the substrate in the cell region, a select gate(SG) is formed on the substrate in the select transistor region. After an oxide layer(109) is formed on the resultant structure, a nitride(110) layer is formed. The nitride layer is etched to leave the nitride layer only between the select gate and an edge cell gate(C0-Cn) adjacent to the select gate. A blanket etch process is performed on the oxide layer so that a spacer is formed on the sidewall of the select gate while a gap between the cell gates is buried. The oxide layer can have a thickness of the spacer to be formed on the sidewall of the select gate.</p> |
