SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要
It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator.
申请公布号
WO2006118291(A1)
申请公布日期
2006.11.09
申请号
WO2006JP309125
申请日期
2006.04.25
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YUKAWA, MIKIO;OHSAWA, NOBUHARU;NOMURA, RYOJI;ASAMI, YOSHINOBU