| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for supporting a substrate in which a crystal is made to grow with a uniform thickness on a deposition surface. SOLUTION: In the method for supporting the substrate of a horizontal vapor phase growing device comprising a susceptor 2 which is for supporting the substrate 11 so that the deposition surface 28 faces the lower side, a step part 21 is formed at the edge of the outer periphery of the substrate 11. A substrate supporter 9 for supporting the substrate 11 by engaging with the step part 21 is formed in the susceptor 2. The step part 21 and the substrate supporter 9 are so formed that the deposition surface 28 of the substrate 11 and the lower surface 20 of the susceptor 2 are in the almost same plane. COPYRIGHT: (C)2007,JPO&INPIT |
