| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having excellent characteristics as to an interface layer between a floating electrode and an inter-electrode insulating layer, or a control electrode and the inter-electrode insulating film. SOLUTION: The nonvolatile semiconductor memory device has the floating electrode 12 formed selectively on a main surface of a semiconductor substrate 10 across a tunnel insulating film 11, the inter-electrode insulating film 14 formed on the floating electrode 12 on a first interface layer 13, and a control electrode 16 further formed thereupon across the second interface layer 15. The device includes a source-drain region 17 formed on the main surface of the substrate corresponding to the electrodes 12 and 16 and has a structure characterized in having at least one of the first interface layer 13 made of a different first material from both the floating electrode 12 and inter-electrode insulating film 14 and the second interface layer 15 made of a different second material different from both the control electrode 16 and inter-electrode insulating film 14. COPYRIGHT: (C)2007,JPO&INPIT
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