| 摘要 |
PROBLEM TO BE SOLVED: To prevent an insulating film from suffering thermal damage when a ferroelectric film is formed at a comparatively high temperature in a semiconductor device provided with a thin-film capacitive element having a ferroelectric film on a protective film made of a thermoplastic resin such as a polyimide-based resin. SOLUTION: A conductive adhesive layer 9 is formed on the top surface of a capacitive element forming region having a planar rectangle shape of a wiring 8b formed on a protective film 5 made of a thermosetting resin such as a polyimide-based resin. Next, the bottom surface of a lower electrode 11 of a previously formed thin-film capacitive element 10 of a planar rectangle shape having the lower electrode 11, a ferroelectric film 12 and an upper electrode 13 are bonded on the top surface of the conductive adhesive layer 9. In this case, since formation of the capacitive element having the ferroelectric film on the wiring 8b is executed only by bonding the bottom surface of the lower electrode 11 of the previously formed thin-film capacitive element 10 on the top surface of the conductive adhesive layer 9, even if the processing temperature in forming the ferroelectric film 12 is comparatively high, the protective film 5 can be prevented from suffering thermal damage. COPYRIGHT: (C)2007,JPO&INPIT
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