发明名称 SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a sputtering target for depositing a Co-based magnetic film having excellent coercive force and less medium noise by the sputtering method. SOLUTION: The sputtering target comprises a fine homogeneous dispersion mixed phase of an alloy phase consisting of at least one kind of metal elements of chromium, nickel, tantalum, and platinum and the balance a cobalt alloy, and a ceramic phase consisting of a compound of at least one kind of elements of oxygen, nitrogen and carbon, and at least one kind of elements of silicon, aluminum, boron, titanium and zirconium which have affinity to these elements. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006307345(A) 申请公布日期 2006.11.09
申请号 JP20060129351 申请日期 2006.05.08
申请人 MITSUI MINING & SMELTING CO LTD 发明人 SAITO TETSUJI;UCHOKU IBURAHIMU;KUJI TOSHIRO;SERA YOSHIHIRO
分类号 C23C14/34;B22F1/00;B22F3/14;B22F9/08;C22C1/04;C22C1/10;C22C19/07;G11B5/851 主分类号 C23C14/34
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