发明名称 |
Fabrication of local interconnect lines |
摘要 |
A method of fabricating local interconnect lines (LILs) of a CMOS structures, the method comprising etching an inter layer dielectric (ILD) material of the CMOS structure at a first temperature to form one or more holes and one or more slits; and etching an etch-stop material of the CMOS structure at a second temperature lower than the first temperature to extend the holes and slits to devices of the CMOS structure.
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申请公布号 |
US2006252195(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20050123833 |
申请日期 |
2005.05.05 |
申请人 |
DUFRENNE STEPHANE;ABIDIN MOHD FAIZAL Z |
发明人 |
DUFRENNE STEPHANE;ABIDIN MOHD FAIZAL Z. |
分类号 |
H01L21/8238;H01L21/302;H01L21/44 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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