发明名称 |
Memory element and its method of formation |
摘要 |
A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
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申请公布号 |
US2006252176(A1) |
申请公布日期 |
2006.11.09 |
申请号 |
US20060480412 |
申请日期 |
2006.07.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MOORE JOHN T.;CAMPBELL KRISTY A.;GILTON TERRY L. |
分类号 |
H01L21/06;C23C14/06;C23C16/30;H01L45/00 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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