| 摘要 |
<p>A method (300) and a deposition system (1, 100) for increasing deposition rates of metal layers (440, 460) from metal-carbonyl precursors (52, 152) using CO gas and a dilution gas. The method (300) includes providing a substrate (25, 125, 400, 402) in a process chamber (10, 110) of a processing system (1, 100), forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, diluting the process gas in the process chamber (10, 110), and exposing the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process. The deposition system (1, 100) contains a substrate holder (20, 120) configured for supporting and heating a substrate (25, 125, 400, 402) in a process chamber (10, 110) having a vapor distribution system (30, 130), a precursor delivery system (105) configured for forming a process gas containing a metal-carbonyl precursor vapor and a CO gas and for introducing the process gas to the vapor distribution system (30, 130), a dilution gas source (37, 137) configured for adding a dilution gas to the process gas in the process chamber (10, 110), and a controller (165) configured for controlling the deposition system (1, 100) during exposure of the substrate (25, 125, 400, 402) to the diluted process gas to deposit a metal layer (440, 460) on the substrate (25, 125, 400, 402) by a thermal chemical vapor deposition process.</p> |
