METHOD OF MANUFACTURING NITRIDE LAYER, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE OF PERPENDICULAR STRUCTURE USING SAME

摘要

PROBLEM TO BE SOLVED: To provide the method of manufacturing a nitride layer and a nitride semiconductor light emitting device of a perpendicular structure.

SOLUTION: The method of manufacturing a nitride layer comprises the steps of providing a sapphire substrate, forming a buffer layer comprising a substance having a melting point higher than nitride and thermal conductivity higher than nitride on the sapphire substrate, forming the nitride layer on the buffer layer, and separating the nitride layer by irradiating laser onto the lower portion of the sapphire layer. This nitride layer 120 is a substance having AlxInyGa(1-x-y)N composition formula (0≤x≤1, 0≤y≤1, and 0≤x+y≤1). The buffer layer comprises SiC.

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