| 摘要 |
PROBLEM TO BE SOLVED: To provide a triaxial magnetic field sensor in a structure to be constructed in a single chip. SOLUTION: A magnetoresistive effect element is formed by a plurality of magnetoresistive effect element bars connected in series by a bias magnet. The magnetoresistive effect elements 21-24 of the X-axis sensor and the magnetoresistive effect elements 31-34 of the Y-axis sensor are formed on a plane parallel to the surface of the substrate. The magnetization sensitivity direction is vertical with respect to the longitudinal direction of each of the magnetoresistive effect element bars. The magnetization direction of the magnetoresistive effect elements 21-24 of the X-axis sensor orthogonally intersects those of the magnetoresistive effect elements 31-34 of the Y-axis sensor. Furthermore, magnetoresistive effect elements 41-44 of the Z-axis sensor are formed on the inclined surface of a protrusion 15, protruding from the surface of the substrate 11, and its magnetization direction is in the inclined surface. The magnetization sensitivity direction is formed so as to be vertical with respect to the longitudinal direction of the magnetoresistive effect element bar. COPYRIGHT: (C)2007,JPO&INPIT
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