Semiconductor device having high dielectric constant material film and fabrication method for the same

摘要

A semiconductor device fabrication method includes: depositing one of a polycrystal, an amorphous and a compound complex of the polycrystal and the amorphous, including at least one of silicon and germanium on a single-crystal silicon region; depositing a high dielectric constant material film on the semiconductor film; annealing the high dielectric constant material film at a temperature of 700 degrees Centigrade or greater; and depositing an electrode film on the high dielectric constant material film.