发明名称 METHOD OF PRODUCING III-NITRIDE SUBSTRATE
摘要 An ingot 3 of a hexagonal III-nitride crystal is cut using a wire array 21 composed of a wire 22 . On this occasion, the ingot 3 is cut in such a manner that the ingot 3 is sliced with supply of an abrasive fluid while feeding at least one of the ingot 3 and wire 22 in a direction perpendicular to an extending direction B of the wire 22 . During cutting the ingot 3 , the extending direction B of the wire 22 is inclined at 3° or more to the {1-100} plane of the ingot 3.
申请公布号 US2006249135(A1) 申请公布日期 2006.11.09
申请号 US20060486216 申请日期 2006.07.14
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 MATSUMOTO NAOKI
分类号 B28D1/08;B24B1/00 主分类号 B28D1/08
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