OXIDE SINGLE CRYSTAL AND METHOD FOR PRODUCTION THEREOF, AND SINGLE CRYSTAL WAFER

摘要

An oxide single crystal having a composition of RE_xSi₆O_1.5x+12 (RE: La, Ce, Pr, Nd or Sm, x: 8 to 10) is grown by the use of the Czochralski method in such a manner that the crystal growth orientation coincides with the c-axis direction. The solidification rate in the crystal growth (the weight of grown crystal/the weight of the raw material charged) is preferably less than 45 %.