| 摘要 |
A method for manufacturing a semiconductor device using STAR(STep gated Asymmetry Recess) processing is provided to remove defects and to prevent deformation of a top rounding profile by performing PET(Post Etch Treatment) processing using electric field. An isolation layer(22) is formed in a silicon substrate(21). An anti-reflective layer(23) is formed on the silicon substrate and etched using an STAR mask(24). By etching the exposed silicon substrate, a STAR pattern(25) having BLC and SNC nodes with different step topology is formed. At this time, a defect layer is simultaneously removed by in-situ processing in the same chamber. The STAR mask and the anti-reflective layer are removed by stripping. A gate oxide layer is formed on the STAR pattern. A gate is then formed on the gate oxide layer to contact the BLC and the SNC nodes.
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