METHOD OF FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREFOR

摘要

A method for forming a semiconductor device and a structure of the semiconductor device are provided to improve a latch up protection, insulation between transistors on a semiconductor die and high integrated density by using a minimum space. A device(25) includes plural active electricity devices including transistors formed on a semiconductor substrate(40). The device includes plural passive electricity devices. The device includes a bipolar transistor(26), a first MOS(27), and a second MOS transistor(28). The device includes a first insulating trench(34). The first insulating trench is formed to enclose the surrounding of a first part of the substrate. The first insulating trench encloses the surrounding of the bipolar transistor. The second MOS transistor is formed at a second part of the substrate enclosed by a second insulating trench(35). The second insulating trench encloses the surrounding of the second MOS transistor. The first MOS transistor is formed at a third part of the substrate. The first third transistor is not enclosed by the first and the second insulating trenches.