发明名称 |
Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
摘要 |
An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting the InGaN quantum well into a p-n junction interface of the p-n junction GaN nanorod. In addition, a plurality of such GaN nanorods are arranged in an array so as to provide an LED having much greater brightness and higher light emission efficiency than a conventional laminated-film GaN LED.
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申请公布号 |
US7132677(B2) |
申请公布日期 |
2006.11.07 |
申请号 |
US20040779197 |
申请日期 |
2004.02.13 |
申请人 |
DONGGUK UNIVERSITY |
发明人 |
KIM HWA-MOK;KANG TAE-WON;CHUNG KWAN-SOO |
分类号 |
H01L29/06;H01L27/15;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109 |
主分类号 |
H01L29/06 |
代理机构 |
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主权项 |
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地址 |
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