发明名称 |
Non-volatile memory devices including fuse covered field regions |
摘要 |
A non-volatile device includes a semiconductor substrate having a fuse window region. At least one fuse crosses the fuse window region. Field regions are arranged outside of the fuse window region and arranged under end portions of the at least one fuse. An isolation layer is configured to isolate the field regions. A fuse insulating layer is interposed between the at least one fuse and the field regions.
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申请公布号 |
US7132728(B2) |
申请公布日期 |
2006.11.07 |
申请号 |
US20040020925 |
申请日期 |
2004.12.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEL JONG-SUN;CHANG SUNG-NAM;KANG DAE-WOONG;PARK BONG-TAE |
分类号 |
H01L21/82;H01L29/00;H01L21/8247;H01L23/525;H01L27/115 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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