SEMICONDUCTOR DEVICE WITH ASYMMETRIC STRESS AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device having asymmetrical stress is provided to improve operation current of a semiconductor device by a simple process by forming nitride with tensile stress in an NMOS region and by forming an oxide layer with compressive stress in a PMOS region. A semiconductor substrate(31) is prepared in which an NMOS and a PMOS are formed. The upper part of the NMOS region of the semiconductor substrate is covered with nitride(43) with tensile stress. An oxide layer(43a) with compressive stress is formed on the PMOS region of the semiconductor substrate. The nitride with tensile stress is oxidized to form the oxide layer.