| 摘要 |
A unit pixel of an image sensor for restraining a dark current and a manufacturing method thereof are provided to improve uniformity of a doping profile in a P-type well region by using an additional ion implantation layer. A trench region(41) isolates a device. A photo diode region(43) receives a light. A P-type well region(42) is physically formed between the trench region and the photo diode region. An additional ion implantation layer is formed on the P-type well region. An N-layer is deeply formed on the photo diode region by the additional ion implantation layer surrounding the trench region. The P-type well region is comprised of a first P-type well layer, the additional ion implantation layer, a second P-type well layer, and a third P-type well layer.
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