MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to increase the overlap accuracy between a recess groove and a gate electrode by reducing CD(Critical Dimension) of the recess groove using tilt etching. An isolation layer(12) is formed in a substrate(10) to define an active region. A pad oxide layer(14) and a hard mask layer are sequentially formed on the resultant structure. By patterning the hard mask layer using a recess mask, a hard mask pattern(16) is formed to expose the pad oxide layer. At this time, the hard mask pattern has a slope plane by using tilt etching. A recess groove(22) is then formed by etching the pad oxide layer and the substrate using the hard mask pattern with slope plane. A gate electrode is then formed in the recess groove.