发明名称 |
Magnetic random access memory array with proximate read and write lines cladded with magnetic material |
摘要 |
An MTJ MRAM cell is formed above or below an intersection of vertically separated, magnetically clad, ultra-thin orthogonal word and bit lines whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The word and bit lines also include a soft magnetic layer of high permeability formed on their surfaces distal from the cell to improve the magnetic field still further. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions and eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
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申请公布号 |
US7132707(B2) |
申请公布日期 |
2006.11.07 |
申请号 |
US20040910725 |
申请日期 |
2004.08.03 |
申请人 |
APPLIED SPINTRONICS, INC. |
发明人 |
MIN TAI;GUO YIMIN;WANG POKANG |
分类号 |
H01L29/76;H01L23/552;H01L27/20;H01L29/82 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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