| 摘要 |
A method for growing a single crystalline epitaxial ZnO thin film of good quality by using radio frequency(RF) magnetron sputtering with high economic efficiency and a method for growing a single crystalline p type ZnO thin film by using radio frequency magnetron sputtering and direct current sputtering at the same time are provided. A method for manufacturing a single crystalline ZnO thin film comprises the steps of: (a) loading a substrate(14) into a sputtering chamber(10) with a ZnO target(18); (b) injecting the argon gas and the oxygen gas into the sputtering chamber while controlling inflow of the argon gas and the oxygen gas by a mass flow controller so that argon(Ar) gas and oxygen(O2) gas are maintained to a predetermined ratio; (c) preheating the substrate to a target temperature; (d) creating a plasma condition by impressing a RF(radio frequency) power source(22) to a cathode(20) to which a target is adhered, thereby ionizing the argon(Ar) gas and the oxygen(O2) gas in a space between the target and the substrate; and (e) growing a ZnO thin film by colliding ions ionized as the plasma condition with the target, thereby continuously depositing a sputtered target material onto the substrate.
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