发明名称 |
Method of eliminating source/drain junction spiking, and device produced thereby |
摘要 |
A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. A metallic layer is formed on the semiconductor substrate, and the metallic layer is reacted with the semiconductor substrate to form an early phase of silicide. Implanted shallow source/drain junctions are formed immediately beneath the silicide. A final phase of the silicide is formed. An interlayer dielectric is deposited above the semiconductor substrate, and contacts are then formed to the silicide.
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申请公布号 |
US7132352(B1) |
申请公布日期 |
2006.11.07 |
申请号 |
US20040913184 |
申请日期 |
2004.08.06 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
CHAN SIMON SIU-SING;BESSER PAUL R.;PATTON JEFFREY P. |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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