| 摘要 |
A method for manufacturing a semiconductor device is provided to minimize the junction leakage current by using ion-implantation process after a BC(Borderless Contact hole) is formed. An isolation layer(22), a gate electrode(23) and a source/drain region(25) are formed at a substrate(21). An insulating layer(28) is formed on the resultant structure. A borderless contact hole(29) is formed at boundary between the isolation layer and the source/drain region by etching selectively the insulating layer. Then, dopants are implanted into the borderless contact hole.
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