MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve process yield and reliability by removing a protrusion part of horn shape using wet chemical without damage of an oxide layer. An isolation layer is formed in a substrate to define an active region. A pad oxide layer and a recess hard mask layer are sequentially formed on the resultant structure. By patterning the hard mask layer and the pad oxide layer using a recess mask, a hard mask and a pad oxide patterns are formed to expose the substrate. A recess groove is formed by etching the exposed substrate. A protrusion part of edges of the recess groove is removed by treating wet chemical. Then, a gate electrode is formed to fill the recess groove after the hard mask pattern and the pad oxide pattern are eliminated.