MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to improve the uniformity of a recess groove by etching a pad oxide layer using wet-etching. An isolation layer is formed in a substrate(10) to define an active region. A pad oxide layer(14) and a polysilicon layer as a hard mask are sequentially formed on the resultant structure. By etching the polysilicon layer using a photoresist pattern, a polysilicon pattern(16) is formed to expose the pad oxide layer. The photoresist pattern is removed. The exposed pad oxide layer is removed to expose the substrate by wet-etching. A recess groove is then formed by etching the exposed substrate. The polysilicon pattern and the pad oxide layer are eliminated. A gate insulating layer is formed on the resultant structure. A gate electrode is then formed on the gate insulating layer to fill the recess groove.