| 摘要 |
A method for manufacturing a semiconductor device is provided to keep a buffer oxide layer in a uniform thickness range after a gate spacer etching process by forming a gate spacer using a polysilicon layer. A gate(104) is formed on a semiconductor substrate(100). An insulating layer is formed on the entire surface of the resultant structure having the gate. A polysilicon layer is formed on the insulating layer. A spacer(109) is formed at both sidewalls of the gate by removing selectively the polysilicon layer using a first etching process. Source/drain regions(110) are formed in the substrate. Then, the spacer is removed from the resultant structure by using a second etching process.
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