| 摘要 |
A method for manufacturing a flat type MIM(Metal Insulator Metal) capacitor is provided to improve capacitor dielectric characteristics by curing a damaged dielectric film under oxygen gas atmosphere. A first metal film, a dielectric film and a second metal film are sequentially formed on a semiconductor substrate(100). An upper electrode(182) is formed on the resultant structure by etching selectively the second metal film. A curing process is performed on the resultant structure under oxygen gas atmosphere. A spacer(192) is formed at both sidewalls of the upper electrode. A capacitor dielectric film(162) is formed by etching selectively the dielectric film using the upper electrode and the spacer as an etch mask. A lower electrode(142) is then formed on the resultant structure by etching selectively the first metal film.
|
