| 摘要 |
A method for manufacturing a semiconductor device is provided to enhance process margin, to obtain stable profile and to prevent a protrusion of horn shape by using an oxide layer as a hard mask for forming a recess groove. An isolation layer(12) is formed in a substrate(10) to define an active region. A hard mask layer made of an oxide layer is formed on the resultant structure. A photoresist pattern as a recess mask is formed on the hard mask layer. A hard mask pattern(14) is formed to expose an overlapped portion with a gate electrode by etching the hard mask layer using the photoresist pattern as a mask. Then, a recess groove(20) is formed by etching the exposed substrate. The remaining hard mask pattern is eliminated by a spin Rpm method using wet chemical.
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