| 摘要 |
A method for manufacturing a CMOS image sensor is provided to remove dangling bonds and to reduce dark current by using a double layer made of a silicon oxide layer and a silicon nitride layer as a buffer layer. A silicon oxide layer(32) as a first buffer layer is formed on a substrate(30) for forming a photodiode. A silicon nitride layer(33) as a second buffer layer is formed on the silicon oxide layer. P0 impurities are implanted into the substrate to form the photodiode. N+ impurities and P+ impurities are sequentially implanted into the substrate, thereby forming the photodiode.
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