THE METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to prevent the loss of charge by removing stress from a top corner of an STI(Shallow Trench Isolation) layer using a germanium ion implantation. An isolation layer(31) is formed in a substrate(30). A photodiode is formed at a predetermined portion adjacent to the isolation layer in the substrate. A silicon nitride layer(40) is formed on the resultant structure corresponding to the photodiode. A germanium ion implantation is performed on the silicon nitride layer. A silicon oxide layer is capable of being interposed between the photodiode and the silicon nitride layer.