| 摘要 |
A shower head of a chemical vapor deposition apparatus is provided to form a uniform thin film on a wafer surface by forming an induction groove on the wafer surface to remove an eccentric flow of reaction gas. A chamber(10) includes a chamber room, where a shower head and a heater are contained. A chamber lead(20) includes a gas-in port at one side. Reaction gas is introduced from outside via the gas-in port. The chamber lead is coupled with an upper surface of the chamber by using a coupler. A blocking plate(30) is arranged under the chamber lead to form a low-temperature region and includes a through-hole. The shower head includes plural coupling holes, which are formed on an outer periphery thereof, such that the shower head is coupled with the chamber lead. The wafer is mounted on an upper surface of a heater(50). A heater support is formed to support the heater from a bottom side. The shower head is arranged inside the chamber room with a predetermined distance between the shower head and the heater. Spraying holes are divided into main and auxiliary holes. The auxiliary holes are arranged to cross the main holes.
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