| 摘要 |
A CMOS image sensor is provided to prevent electrons from moving directly from a photodiode to a floating node using a blocking region. A CMOS image sensor comprises a photodiode, a gate pattern of a transfer transistor(Tx), and a blocking region. The gate pattern is used for transferring selectively the electrons stored in the photodiode to a floating node. The blocking region is arranged at an end of a contact portion between the gate pattern and the photodiode to restrain the electrons of the photodiode from being directly transferred into the floating node without the use of a channel of the gate pattern.
|
