| 摘要 |
A method for forming a drive transistor of a CMOS image sensor is provided to improve charge transfer characteristics and to enhance the quality of image by decreasing a threshold voltage of the drive transistor itself using a nonuniform concentration of a predetermined well. A predetermined well(104) is formed in a substrate(100). A transistor structure is formed on the predetermined well. The concentration of one portion is different from that of another within the predetermined well, so that a threshold voltage of the transistor structure is capable of being decreased. The predetermined well is a P type well and the transistor structure is an NMOS transistor.
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