| 摘要 |
A method for manufacturing a CMOS image sensor is provided to reduce the capacitance of a floating diffusion region and to increase a conversion gain by using an ion implantation barrier layer. A plurality of gate electrodes(208) are formed on a semiconductor substrate(201). An ion implantation barrier layer(210) for blocking a photodiode region and a floating diffusion region is formed on the resultant structure. A low ion implantation and a halo ion implantation are sequentially performed on the resultant structure. Then, the ion implantation barrier layer is eliminated therefrom. A spacer is formed at both sidewalls of each gate electrode.
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