SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to restrain a substrate from silicide in a bar type contact hole. First and second active regions are formed on a semiconductor substrate(50). An interlayer dielectric is formed on the semiconductor substrate. The interlayer dielectric has a bar type contact hole(70b) for exposing the first active region to the outside and a dot type contact hole(70d) for exposing the second active region. A semiconductor layer(71) is formed on the first active region in the bar type contact hole. A barrier metal(172) is formed along an upper surface of the resultant structure. A conductive layer is formed on resultant structure in order to fill completely the contact holes.