| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technical solution that can reduce HF defect density in a semiconductor layer by specifically reducing the influence of chemical-mechanical polishing and RCA cleaning to the generation of HF defects in a subsequent process, wherein the semiconductor layer is subjected to a chemical-mechanical polishing process and an RCA cleaning process. <P>SOLUTION: A processing method that is applied to a wafer having at least one surface layer of a semiconductor material is added to a chemical-mechanical polishing process, and a subsequent RCA cleaning process which are applied to the surface of the semiconductor surface layer. The method includes an intermediate cleaning process which is taken place after the chemical-mechanical polishing process and before the RCA cleaning process. The intermediate cleaning process cleans the surface of the semiconductor layer using an SC1 at concentration and temperature conditions that reduces the generation of the defects in the surface layer (curve B) as compared to the result in a similar surface layer (curve A) on which the intermediate cleaning process does not taken place. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
