| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress occurrence of micro scratch by reducing flocculate grain density in polishing slurry used in a chemical mechanical polishing process. <P>SOLUTION: When performing the chemical mechanical polishing process by supplying the polishing slurry to a processed surface of each wafer flowing in a mass production process, the polishing slurry is left to stand in the vessel for longer than 30 days, preferably than 40 days, and more preferably than 50 days. Accordingly, a density of flocculate grain of the polish slurry profiled in a particle size of 1μm or more by 200 thousand pieces/0.5 cc or less, preferably 50 thousand pieces/0.5 cc or less, and more preferably 20 thousand pieces or less/0.5 cc, is used. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
