| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing technique in which, when a polishing face of a silicon dioxide based material layer is polished in manufacturing a semiconductor integrated circuit device, the pattern dependence of a polishing rate is very small, thereby realizing high planarization. <P>SOLUTION: This abrasive is for chemical mechanical polishing, and contains a kind or more of additives selected from among a group, consisting of cerium oxide particles, water, water-soluble organic polymer compound, and anion surfactant. The pH of the abrasive at 25°C is set in a range of 3.5-6. The total concentration of additives in the abrasive is set in a range of 0.01-0.5 mass%, and the abrasive is diluted with water once or more during the production. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
