发明名称 Perfluoride processing apparatus
摘要 A plurality of etchers such as poly-etchers 3 or the like are installed within a clean room 2 . A duct 7 that is connected to all the etchers is connected to a PFC decomposition device 9 , which is installed outside of the clean room 2 . An exhaust gas which contains PFC as drained out of all the etchers within the clean room 2 is supplied by the duct 7 to the inner space of PFC decomposition device 9 . After having heated up within the PFC decomposition device 9 , the PFC is decomposed by the action of a catalyst which is filled within the PFC decomposition device 9 . It is no longer required to provide a space for installation of the PFC decomposition device 9 in the clean room 2 with the semiconductor fabrication apparatus or the liquid crystal manufacturing apparatus installed therein, thus enabling size reduction or "downsizing" of the clean room. It is possible to reduce the size of a clean room in which a semiconductor fabricating apparatus or a liquid crystal manufacturing apparatus is installed.
申请公布号 US2006245983(A1) 申请公布日期 2006.11.02
申请号 US20050289654 申请日期 2005.11.30
申请人 KOKUN RI;TAMATA SHIN 发明人 KOKUN RI;TAMATA SHIN
分类号 B01D53/34;B01D53/70;B01D53/46;B01D53/68;B01D53/86 主分类号 B01D53/34
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