MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact

摘要

A process for manufacturing a MOS device is described. The process comprising: providing a body of semiconductor material having a surface; forming a stack on the surface of the body, the stack including a first polysilicon region, an intermediate dielectric region arranged on top of the first polysilicon region, and a second polysilicon region arranged on top of the intermediate dielectric region; depositing a passivation layer on top of and laterally to the stack; and forming at least one electrical connection region in direct electrical contact with the first and second polysilicon regions, wherein the electrical connection region is formed laterally with respect to both the first and second polysilicon regions.