| 摘要 |
A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N- type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N- type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer having a thickness of 3 to 20 microns; a first field plate overlying the oxide layer; and second field plate overlying the polymide layer and the first field plate, wherein the second field plate overlaps the first field plate by 2 to 15 microns. |
