发明名称 |
Semiconductor power device with passivation layers |
摘要 |
A semiconductor power device comprises a semiconductor substrate. The substrate includes an N-type silicon region and N+ silicon region. An oxide layer overlies the N- type silicon region, the oxide layer formed using a Plasma Enhanced Chemical Vapor deposition (PECVD) method. First and second electrodes are coupled to the N- type silicon region and the N+ type silicon region, respectively. The oxide layer has a thickness 0.5 to 3 microns. The power device also includes a polymide layer having a thickness of 3 to 20 microns; a first field plate overlying the oxide layer; and second field plate overlying the polymide layer and the first field plate, wherein the second field plate overlaps the first field plate by 2 to 15 microns. |
申请公布号 |
EP1717863(A2) |
申请公布日期 |
2006.11.02 |
申请号 |
EP20060008480 |
申请日期 |
2006.04.25 |
申请人 |
IXYS CORPORATION |
发明人 |
VEERAMMA, SUBHAS CHANDRA BOSE JAYAPPA |
分类号 |
H01L21/316;H01L23/29;H01L29/06;H01L29/40;H01L29/861 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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